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PD - 94050A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET(R) Power MOSFET D IRFZ44VS IRFZ44VL VDSS = 60V RDS(on) = 16.5m G S ID = 55A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak IRFZ44VS TO-262 IRFZ44VL The through-hole version (IRFZ44VL) is available for low-profile applications. Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 55 39 220 115 0.77 20 115 55 11 4.5 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 1.3 40 Units C/W www.irf.com 1 01/04/02 IRFZ44VS/IRFZ44VL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 --- --- 2.0 24 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.062 --- --- --- --- --- --- --- --- --- --- 13 97 40 57 4.5 7.5 1812 393 103 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 16.5 m VGS = 10V, ID = 31A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 31A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 51A 18 nC VDS = 48V 25 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 51A ns --- RG = 9.1 --- RD = 0.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 55 --- --- showing the A G integral reverse --- --- 220 S p-n junction diode. --- --- 2.5 V TJ = 25C, IS = 51A, VGS = 0V --- 70 105 ns TJ = 25C, IF = 51A --- 146 219 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 51A, di/dt 227A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 89H RG = 25, IAS = 51A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFZ44VS/IRFZ44VL 1000 I D , Drain-to-Source Current (A) 100 10 4.5V 1 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 175C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 3.0 ID = 55A I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 2.5 100 2.0 1.5 10 1.0 0.5 1 4 5 6 7 8 V DS = 25V 20s PULSE WIDTH 9 10 11 12 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFZ44VS/IRFZ44VL 4000 20 3000 Crss = Cgd Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED ID = 51A 16 V DS= 48V V DS= 30V V DS= 12V C, Capacitance(pF) 12 2000 Ciss 8 1000 Coss Crss 0 1 10 100 4 0 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 1000 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage ISD , Reverse Drain Current (A) TJ = 175 C OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 10 TJ = 25 C ID , Drain Current (A) 100 100 100us 10 1 1ms 0.1 0.2 V GS = 0 V 0.7 1.2 1.7 2.2 1 1 TC = 25 C TJ = 175 C Single Pulse 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFZ44VS/IRFZ44VL RD 60 VDS VGS D.U.T. + VDD 50 RG ID , Drain Current (A) - 40 10V Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.1 0.001 0.01 1 PDM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ44VS/IRFZ44VL EAS , Single Pulse Avalanche Energy (mJ) 250 15V 200 VDS L D R IV E R ID 21A 36A BOTTOM 51A TOP RG 20V D .U .T IA S tp 150 + - VD D A 0 .0 1 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ44VS/IRFZ44VL Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44VS/IRFZ44VL D2Pak Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200 ) 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1 .39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L 8 www.irf.com IRFZ44VS/IRFZ44VL TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 9 IRFZ44VS/IRFZ44VL D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TR R 1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .10 (.16 1) 3 .90 (.15 3) 1.60 (.06 3) 1.50 (.05 9) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) F E E D D IR E C TIO N 1 .8 5 (.0 73 ) 1 .6 5 (.0 65 ) 1 1 .6 0 (.4 57 ) 1 1 .4 0 (.4 49 ) 15 .4 2 (.6 0 9 ) 15 .2 2 (.6 0 1 ) 24 .3 0 (.9 5 7 ) 23 .9 0 (.9 4 1 ) TR L 10 .9 0 (.4 2 9 ) 10 .7 0 (.4 2 1 ) 1.7 5 (.06 9 ) 1.2 5 (.04 9 ) 1 6 .1 0 (.63 4 ) 1 5 .9 0 (.62 6 ) 4 .7 2 (.1 36 ) 4 .5 2 (.1 78 ) F E E D D IR E C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M A X. 60.00 (2.362) M IN . N O T ES : 1. C O M F O R M S T O EIA-418. 2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER . 3. D IM EN SIO N ME AS UR ED @ HU B . 4. IN C LU DE S FLA N G E D IS TO RT IO N @ O U TE R E D G E. 26 .40 (1.03 9) 24 .40 (.961 ) 3 30.40 (1.197) M AX . 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/02 10 www.irf.com |
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